ACT-SF41632N-39P5C中文资料

时间:2022-11-22 18:41:52 作者:壹号 字数:1300字

元器件交易网

ACT-SF41632 High Speed128Kx32 SRAM / 512Kx32 Flash

Multichip Module

FEATURES

4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in One MCM

sAccess Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash)

sOrganized as 128K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data BussLow Power CMOS

sInput and Output TTL Compatible DesignsMIL-PRF-38534 Compliant MCMs Available

sDecoupling Capacitors and Multiple Grounds for Low Noise

sCommercial, Industrial and Military Temperature Ranges

sIndustry Standard Pinouts

sTTL Compatible Inputs and Outputs sPackaging – Hermetic Ceramic

q 66–Lead, PGA-Type, 1.385"SQ x 0.245"max, Aeroflex code# "P1,P5 with/without shoulders)"q 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max (.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)

s

s

FLASH MEMORY FEATURES

Sector Architecture (Each Die)

q 8 Equal Sectors of 64K bytes each

q Any combination of sectors can be erased with one command sequence. s+5V Programing, +5V Supply

sEmbedded Erase and Program AlgorithmssHardware and Software Write Protection

sPage Program Operation and Internal Program Control Time.

s10,000 Erase/Program Cycles

AERO

F

…… 此处隐藏0字 ……

LE

XLA

B

SINC.

C

9001

E

RTIFIED