非易失性的电阻开关在石墨烯氧化物薄膜
APPLIEDPHYSICSLETTERS95,232101 2009
Nonvolatileresistiveswitchingingrapheneoxidethin lms
C.L.He,1F.Zhuge,1X.F.Zhou,1M.Li,1G.C.Zhou,1Y.W.Liu,1J.Z.Wang,1B.Chen,1W.J.Su,1Z.P.Liu,1,a Y.H.Wu,2P.Cui,1andRun-WeiLi1,a
1
NingboInstituteofMaterialsTechnologyandEngineering(NIMTE),ChineseAcademyofSciences(CAS),Ningbo315201,People’sRepublicofChina2
DepartmentofElectricalandComputerEngineering,NationalUniversityofSingapore,Singapore117576,Singapore
Received30September2009;accepted11November2009;publishedonline7December2009 Reliableandreproducibleresistiveswitchingbehaviorswereobservedingrapheneoxide GO thin lmspreparedbythevacuum ltrationmethod.TheCu/GO/Ptstructureshowedanon/offratioofabout20,aretentiontimeofmorethan104s,andswitchingthresholdvoltagesoflessthan1V.Theswitchingeffectcouldbeunderstoodbyconsideringthedesorption/absorptionofoxygen-relatedgroupsontheGOsheetsaswellasthediffusionofthetopelectrodes.OurexperimentsindicatethatGOispotentiallyusefulforfuturenonvolatilememoryapplications.©2009AmericanInstituteofPhysics. doi:10.1063/1.3271177
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Current(A)
Voltage(V)
FIG.1. Coloronline a Aschematiccon gurationoftheCu/GO/Ptsand-wichedstructure. b I-VcharacteristicsoftheCu/GO/Ptstructure.Thear-rowsindicatethesweepdirection.TheinsetshowstheI-Vcharacteristicsinsemilogarithmicscale.
©2009AmericanInstituteofPhysics
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0003-6951/2009/95 23 /232101/3/$25.0095,232101-1