元器件交易网
APT20M20B2LLAPT20M20LLL
200V100A0.020W
TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering Rand QDS(ON)g. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT'spatented metal gate structure. Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
SymbolParameter
APT20M20
UNITVDSSDrain-Source Voltage
200
VoltsIDContinuous Drain Current @ TC = 25°C100IDM400VGS±30VICALAmps
Gate-Source Voltage ContinuousGSMGate-Source Voltage Transient
±40VoltsPTotal Power Dissipation @ TC = 25°C570WattsDLinear Derating Factor
4.56W/°CTJ,TSTG
Operating and Storage Junction Temperature Range TECHNION-55 to 150
TLLead Temperature: 0.063" from Case for 10 Sec.300°CIAR(Repetitive and Non-Repetitive)
100AmpsEARADVANCERMAT50
EAS
IN
FO2500
mJ
STATIC ELECTRICAL CHARACTERISTICS
SymbolCharacteristic / Test Conditions
MINTYPMAXUNITBVDSSDrain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)200VoltsID(on)On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V)100
Amps
RDS(on)Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.])0.020OhmsIZero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25DSSZero Gate Voltage Drain Current (VµADS = 0.8 VDSS, VGS = 0V, TC = 125°C)250IGSSGate-Source Leakage Current (VGS = ±30V, VDS = 0V)±100
nAVGS(th)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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